features low cost low leakage glass passivated junction high current capability mechanical data case:jedec r - 6,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.072 ounces,2.04grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. her 6 0 3 g her 6 0 4 g her 6 0 5 g her 6 0 6 g h e r 6 0 7 g her 6 0 8 g units maximum recurrent peak reverse voltage v r r m 2 0 0 3 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v max imum rms v olt age v r m s 1 4 0 2 1 0 2 8 0 4 2 0 5 6 0 7 0 0 v maximum dc blocking voltage v dc 200 300 400 600 800 1000 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 6.0a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg r - 6 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 1.7 1.0 1.3 100 60 70 12 200.0 h e r 601 g - - - h e r 608 g a 10.0 easily cleaned with alcohol,isopropanol and sim ilar s olvents i f(av) 6.0 h i g h e ff i c i e n cy r ec t i f i er s 70 voltage range: 50 --- 1000 v current: 6.0 a 35 the plastic material carries u/l recognition 94v-0 a 3.thermal resistance junction to ambient. her 6 0 1 g her 6 0 2 g 50 100 a 200.0 i r maximum ratings and electrical characteristics i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. - 55 ---- + 150 65 100 50 - 55 ---- + 150 dimensions in millimeters www.diode.kr diode semiconductor korea
0 100 300 11 01 0 0 150 5 50 250 200 50 350 8.3ms single half sine-wave t j =25 ?? amperes amperes amperes fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge current number of cycles at 60hz reverse voltage,volts h e r 6 0 1 g --- h e r 6 0 8 g fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current set time base for 10/20 ns/cm junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current t rr - 1 . 0 a - 0 . 25a 0 + 0 . 5 a 1cm 0 0 . 1 1 10 1 0 0 t j =25 pulse width=300 t j =25 single phase half wave 60h z resistive or inductive load 0.375"(9 .5mm)lead length 0 0 25 50 125 100 75 175 150 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 6 . 0 pulse generator (note2) d.u.t. 50 n 1. 10 n1. oscilloscope (note 1) (+) 50vdc (approx) (-) 1 nonin- ductive diode semiconductor korea www.diode.kr
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